收藏本站
SQS400EN
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = 10 V
R DS(on) ( ? ) at V GS = 4.5 V
I D (A)
Configuration
40
0.018
0.032
16
Single
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? AEC-Q101 Qualified d
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK ?
1212-8
D
3.30 mm
1
S
S
3.30 mm
2
3
S
4
G
8
D
7
D
D
G
6
5
D
Bottom View
Part Marking Code: Q004
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
PowerPAK 1212-8
SQS400EN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
40
± 20
UNIT
V
Continuous Drain Current a
T C = 25 °C
T C = 125 °C
I D
16
16
Continuous Source Current (Diode Conduction) a
I S
16
A
Pulsed Drain
Current b
I DM
64
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I AS
E AS
P D
T J , T stg
15
11.25
62.5
20
- 55 to + 175
260
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
R thJA
R thJC
81
2.4
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2129 Rev. D, 31-Oct-11
1
Document Number: 65362
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SQS401EN-T1-GE3 MOSFET P-CH D-S 40V PPAK 1212-8
SSA-LXB102GD LED ARRAY 3MM 10SEG FLAT TOP GRN
SSA-LXB102ID LED ARRAY 3MM 10SEG FLAT TOP RED
SSA-LXB102SRD LED ARRAY 3MM 10SEG FLAT SUP RED
SSA-LXB102YD LED ARRAY 3MM 10SEG FLAT TOP YEL
SSA-LXB10GW-GF/LP LED ARRAY 10X25MM 10SEG GRN DIFF
SSA-LXB10GW LED ARRAY 1.78X5MM 565NM GRN WHT
SSA-LXB10HW-GF LED ARRAY 1.78X5MM 700NM HRD WHT
相关代理商/技术参数
SQS401EN-T1-GE3 功能描述:MOSFET 40V 16A 62.5W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQS404EN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 30 V (D-S) 175 ?°C MOSFET
SQS404EN-T1-GE3 制造商:Vishay Semiconductors 功能描述:
SQS420EN-T1-GE3 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 8A 8-Pin PowerPAK 1212 T/R
SQS460EN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQS460EN-T1-GE3 功能描述:MOSFET 60V 8A 39W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQS462EN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQS462EN-T1-GE3 功能描述:MOSFET 60V 8A 33W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube